SI5325/26-EVB Silicon Laboratories Inc, SI5325/26-EVB Datasheet - Page 7

• Manufacturer Part Number: SI5325/26-EVB
• Description: BOARD EVAL FOR SI5325/26
• Manufacturer: Silicon Laboratories Inc

Specifications of SI5325/26-EVB

• Main Purpose: Timing, Clock Generator
• Utilized Ic / Part: SI5325, SI5326
• Processor To Be Evaluated: Si5325 and Si5326
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Secondary Attributes: -
• Embedded: -
• Primary Attributes: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 2. DC Characteristics (Continued)
(V
Output Drive Current
(CMOS driving into
CKO
or CKO
high. CKOUT+ and
CKOUT– shorted
externally)
2-Level LVCMOS Input Pins
Input Voltage Low
Input Voltage High
Notes:
DD
1.
2. No under- or overshoot is allowed.
3. LVPECL outputs require nominal V
4. This is the amount of leakage that the 3-Level inputs can tolerate from an external driver. See Si53xx
5. LVPECL, CML, LVDS and low-swing LVDS measured with Fo = 622.08 MHz.
= 1.8 ± 5%, 2.5 ±10%, or 3.3 V ±10%, T
VOL
Parameter
Current draw is independent of supply voltage
Family Reference Manual for more details.
VOH
for output low
for output
Symbol
CKO
V
V
IH
IL
IO
A
= –40 to 85 °C)
DD
ICMOS[1:0] =11
ICMOS[1:0] =10
ICMOS[1:0] =01
ICMOS[1:0] =00
ICMOS[1:0] =11
ICMOS[1:0] =10
ICMOS[1:0] =01
ICMOS[1:0] =00
Test Condition
≥ 2.5 V.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
= 2.25 V
= 1.71 V
= 2.25 V
= 2.97 V
= 1.89 V
= 3.63 V
= 1.8 V
= 1.8 V
= 1.8 V
= 1.8 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
Rev. 1.0
Min
1.4
1.8
2.5
—
—
—
—
—
—
—
—
—
—
—
1.75
Typ
7.5
5.5
3.5
32
24
16
—
—
—
—
—
—
8
Max
0.5
0.7
0.8
—
—
—
—
—
—
—
—
—
—
—
Si5326
Unit
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
7