MCIMX512CJM6C Freescale Semiconductor, MCIMX512CJM6C Datasheet - Page 43

• Manufacturer Part Number: MCIMX512CJM6C
• Description: MULTIMEDIA PROC 529-LFBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX51r

Specifications of MCIMX512CJM6C

• Core Processor: ARM Cortex-A8
• Core Size: 32-Bit
• Speed: 600MHz
• Connectivity: 1-Wire, EBI/EMI, Ethernet, I²C, IrDA, MMC, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: ROMless
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 0.8 V ~ 1.15 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 529-LFBGA
• Operating Temperature (min): -40C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Processor Series: i.MX51
• Core: ARM Cortex A8
• Data Bus Width: 32 bit
• Program Memory Size: 36 KB
• Data Ram Size: 128 KB
• Interface Type: I2C, SPI, SSI, UART, USB
• Maximum Clock Frequency: 200 MHz
• Number Of Timers: 5
• Operating Supply Voltage: 0.8 V to 1.15 V
• Maximum Operating Temperature: + 95 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: MCIMX51EVKJ
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Compliant

AC electrical characteristics in DDR2 mode for Fast mode and for ovdd=1.65-1.95V, ipp_hve=0 are
placed in
AC electrical characteristics in DDR2 mode for Slow mode and for ovdd=1.65-1.95V, ipp_hve=0 are
placed in
Freescale Semiconductor
1
2
3
1
2
3
Output Pad Transition Times
Output Pad Propagation Delay, 50%-50%
Output Pad Slew Rate
Output Pad di/dt
Input Pad Transition Times
Input Pad Propagation Delay (DDR input),
50%-50%
Maximum Input Transition Times
Output Pad Transition Times
Output Pad Propagation Delay, 50%-50%
Output Pad Slew Rate
Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5=000000.
Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
Hysteresis mode is recommended for input with transition time greater than 25 ns.
Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3
V, IO 1.95 V, -40 °C and s0-s5=000000.
Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO 1.8
V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and -40 °C.
Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table
Table
2
Table 42. AC Electrical Characteristics of DDR2_clk IO Pads for Slow mode and for
Table 41. AC Electrical Characteristics of DDR2_clk IO Pads for Fast mode and
41.
1
42.
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
Parameter
Parameter
1
1
2
1
1
3
1
1
ovdd=1.65 – 1.95 V (ipp_hve=0)
for ovdd=1.65 – 1.95 V
Symbol
Symbol
di/dt
tpo
trm
tpo
tps
tps
tpr
tpr
trfi
tpi
Condition
Condition
1.2 pF
1.2 pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
Test
Test
—
—
0.58/0.57
1.29/1.28
1.05/1.03
1.54/1.56
2.02/2.05
0.91/0.91
0.09/0.09 0.132/0.128 0.212/0.213
0.74/0.76
1.40/1.39
1.56/1.61
2.12/2.22
1.58/1.54
0.84/0.84
0.3/0.36
rise/fall
rise/fall
Min
Min
390
—
0.45/0.44
0.97/0.93
1.40/1.31
1.75/1.69
2.40/2.45
0.69/0.72
1.18/1.20
2.02/2.08
2.49/2.61
1.57/1.50
0.92/0.90
1.11/1.16
0.5/0.52
Typ
201
Typ
—
Electrical Characteristics
0.45/0.45
0.82/0.85
2.12/1.96
2.43/2.31
2.20/2.20
1.21/1.16
0.82/0.94
1.04/1.01
1.48/1.47
3.45/3.33
4.05/3.98
0.95/0.98
0.67/0.67
rise/fall
rise/fall
Max
Max
99
5
mA/ns
Units
Units
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
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