MCIMX512CJM6C Freescale Semiconductor, MCIMX512CJM6C Datasheet - Page 44

• Manufacturer Part Number: MCIMX512CJM6C
• Description: MULTIMEDIA PROC 529-LFBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX51r

Specifications of MCIMX512CJM6C

• Core Processor: ARM Cortex-A8
• Core Size: 32-Bit
• Speed: 600MHz
• Connectivity: 1-Wire, EBI/EMI, Ethernet, I²C, IrDA, MMC, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: ROMless
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 0.8 V ~ 1.15 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 529-LFBGA
• Operating Temperature (min): -40C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Processor Series: i.MX51
• Core: ARM Cortex A8
• Data Bus Width: 32 bit
• Program Memory Size: 36 KB
• Data Ram Size: 128 KB
• Interface Type: I2C, SPI, SSI, UART, USB
• Maximum Clock Frequency: 200 MHz
• Number Of Timers: 5
• Operating Supply Voltage: 0.8 V to 1.15 V
• Maximum Operating Temperature: + 95 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: MCIMX51EVKJ
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
AC electrical characteristics in DDR mobile for Fast mode and ovdd=1.65-1.95V, ipp_hve=0 are placed
in
44
1
2
3
Output Pad di/dt
Input Pad Transition Times
Input Pad Propagation Delay (DDR input),
50%-50%
Maximum Input Transition Times
Output Pad Transition Times (High Drive)
Output Pad Transition Times (Medium Drive)
Output Pad Transition Times (Low Drive)
Output Pad Propagation Delay (High Drive)
Output Pad Propagation Delay (Medium Drive)
Output Pad Propagation Delay (Low Drive)
Output Pad Slew Rate (High Drive)
Output Pad Slew Rate (Medium Drive)
Output Pad Slew Rate (Low Drive)
Output Pad di/dt (High Drive)
Output Pad di/dt (Medium drive)
Table
Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3
V, IO 1.95 V, -40 °C and s0-s5=000000.
Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO 1.8
V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and -40 °C.
Hysteresis mode is recommended for input with transition time greater than 25 ns.
43.
2
Table 42. AC Electrical Characteristics of DDR2_clk IO Pads for Slow mode and for
Table 43. AC Electrical Characteristics of DDR_clk mobile IO Pads for Fast mode
1
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
Parameter
Parameter
2
1
1
3
1
ovdd=1.65 – 1.95 V (ipp_hve=0) (continued)
1
1
and ovdd=1.65 – 1.95 V (ipp_hve=0)
1
1
1
1
1
1
Symbol
Symbol
di/dt
di/dt
di/dt
trm
tpo
tpo
tpo
tps
tps
tps
tpr
tpr
tpr
trfi
tpi
Condition
Condition
1.2 pF
1.2 pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
Test
Test
—
—
—
—
0.09/0.09 0.132/0.128 0.212/0.213
1.35/1.32
3.01/2.96
1.98/1.98
4.52/4.38
3.99/3.94
8.93/8.86
1.60/1.58
2.74/2.81
2.07/2.08
3.79/3.92
3.47/3.57
6.94/7.26
0.87/0.89
0.39/0.40
0.59/0.59
0.26/0.27
0.29/0.30
0.13/0.13
0.3/0.36
rise/fall
rise/fall
Min
Min
185
124
82
—
1.03/1.03
2.29/2.30
1.55/1.54
3.46/3.45
3.10/3.04
6.77/6.85
1.85/1.74
2.71/2.67
2.19/2.12
3.46/3.51
3.23/3.25
5.84/6.06
1.05/1.05
0.47/0.47
0.70/0.70
0.31/0.31
0.35/0.36
0.16/0.16
0.5/0.52
Typ
Typ
40
61
—
91
Freescale Semiconductor
0.82/0.94
0.89/0.89
1.84/1.92
1.29/1.30
2.80/2.88
2.50/2.57
5.40/5.68
2.58/2.31
3.26/3.08
2.86/2.62
3.87/3.77
3.69/3.55
5.73/5.87
0.54/0.52
0.77/0.76
0.35/0.34
0.40/0.39
0.18/0.17
1.11/1.11
rise/fall
rise/fall
Max
Max
19
46
31
5
mA/ns
mA/ns
mA/ns
Units
Units
V/ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns