CYUSB3011-BZXC CYPRESS [Cypress Semiconductor], CYUSB3011-BZXC Datasheet - Page 20

• Manufacturer Part Number: CYUSB3011-BZXC
• Manufacturer: CYPRESS [Cypress Semiconductor]

Table 9. DC Specifications (continued)
Document Number: 001-52136 Rev. *L
V
V
I
I
I
I
I
I
I
I
V
V
V
IX
OZ
CC
CC
SB1
SB2
SB3
SB4
Parameter
OH
OL
RAMP
N
N_AVDD
Core
USB
Output HIGH voltage
Output LOW voltage
Input leakage current for all pins except
SSTXP/SSXM/SSRXP/SSRXM
Output High-Z leakage current for all
pins except SSTXP/ SSXM/
SSRXP/SSRXM
Core and analog voltage operating
current
USB voltage supply operating current
Total suspend current during suspend
mode with USB 3.0 PHY enabled (L1)
Total suspend current during suspend
mode with USB 3.0 PHY disabled (L2)
Total standby current during standby
mode (L3)
Total standby current during core
power-down mode (L4)
Voltage ramp rate on core and I/O
supplies
Noise level permitted on V
supplies
Noise level permitted on A
Description
VDD
DD
and I/O
supply
0.9 × VCC
Min
0.2
–1
–1
–
–
–
–
–
–
–
–
–
0.1 × VCC
Max
200
100
60
50
20
–
1
1
–
–
–
–
Units
V/ms
mA
mA
mA
mA
mV
mV
µA
µA
µA
µA
V
V
I
quarter drive strength. VCC is
the corresponding I/O voltage
supply.
I
quarter drive strength. VCC is
the corresponding I/O voltage
supply.
All I/O signals held at V
(For I/Os with a pull-up or
pull-down resistor connected,
the leakage current increases
by V
All I/O signals held at V
Total current through A
V
Core current: 1.5 mA
I/O current: 20 µA
USB current: 2 mA
For typical PVT (typical silicon,
all power supplies at their
respective nominal levels at
25 °C.)
Core current: 250 µA
I/O current: 20 µA
USB current: 1.2 mA
For typical PVT (Typical
silicon, all power supplies at
their respective nominal levels
at 25 °C.)
Core current: 60 µA
I/O current: 20 µA
USB current: 40 µA
For typical PVT (typical silicon,
all power supplies at their
respective nominal levels at
25 °C.)
Core current: 0 µA
I/O current: 20 µA
USB current: 40 µA
For typical PVT (typical silicon,
all power supplies at their
respective nominal levels at
25 °C.)
Voltage ramp must be
monotonic
Max p-p noise level permitted
on all supplies except A
Max p-p noise level permitted
on A
OH
OL
DD
(min) = +100 µA tested at
(max) = –100 µA tested at
DDQ
VDD
/R
CYUSB301X
pu
Notes
Page 20 of 40
or V
DDQ
/R
VDD
DDQ
DDQ
VDD
PD
,