MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 22

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Deep Power-Down
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
Auto precharge ensures that the precharge is initiated at the earliest valid stage within a
burst. The user must not issue another command to the same bank until the precharge
time (
issued at the earliest possible time, as described for each burst type in “Operations” on
page 23.
Deep power-down is an operating mode used to achieve maximum power reduction by
eliminating the power to the memory array. Data will not be retained once the device
enters deep power-down mode.
t
RP) is completed. This is determined as if an explicit PRECHARGE command was
22
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile SDRAM
©2006 Micron Technology, Inc. All rights reserved.
Commands