AT90USB646-MU Atmel, AT90USB646-MU Datasheet - Page 382

• Manufacturer Part Number: AT90USB646-MU
• Description: IC AVR MCU 64K 64QFN
• Manufacturer: Atmel
• Series: AVR® 90USBr

Specifications of AT90USB646-MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI, I²C, SPI, UART/USART, USB, USB OTG
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 48
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-VQFN Exposed Pad, 64-HVQFN, 64-SQFN, 64-DHVQFN
• Processor Series: 90USB
• Core: AVR
• Data Bus Width: 8 bit
• Data Ram Size: 4 KB
• Interface Type: SPI, TWI, USART, USB
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 48
• Number Of Timers: 4
• Operating Supply Voltage: 5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 85 C
• Cpu Family: AT90
• Device Core: AVR
• Device Core Size: 8b
• Frequency (max): 20MHz
• Total Internal Ram Size: 4KB
• # I/os (max): 48
• Number Of Timers - General Purpose: 4
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 2.7V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 64
• Package Type: QFN EP
• For Use With: ATSTK600-TQFP64 - STK600 SOCKET/ADAPTER 64-TQFP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATSTK525 - KIT STARTER FOR AT90USBAT90USBKEY2 - KIT DEMO FOR AT90USB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: AT90USB646-16MU; AT90USB646-16MU

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Table 29-15. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol
t
t
t
1. Power-up sequence:
2. Wait for at least 20 ms and enable serial programming by sending the Programming
3. The serial programming instructions will not work if the communication is out of syn-
4. The Flash is programmed one page at a time. The memory page is loaded one byte at
5. The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
WD_FLASH
WD_EEPROM
WD_ERASE
Apply power between V
tems, the programmer can not guarantee that SCK is held low during power-up. In this
case, RESET must be given a positive pulse of at least two CPU clock cycles duration
after SCK has been set to “0”.
Enable serial instruction to pin PDI.
chronization. When in sync. the second byte (0x53), will echo back when issuing the
third byte of the Programming Enable instruction. Whether the echo is correct or not, all
four bytes of the instruction must be transmitted. If the 0x53 did not echo back, give
RESET a positive pulse and issue a new Programming Enable command.
a time by supplying the 7 LSB of the address and data together with the Load Program
Memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the address
lines 15..8. Before issuing this command, make sure the instruction Load Extended
Address Byte has been used to define the MSB of the address. The extended address
byte is stored until the command is re-issued, i.e., the command needs only be issued
for the first page, and when crossing the 64KWord boundary. If polling (
used, the user must wait at least t
15.) Accessing the serial programming interface before the Flash write operation com-
pletes can result in incorrect programming.
data together with the appropriate Write instruction. An EEPROM memory location is
first automatically erased before new data is written. If polling is not used, the user must
wait at least t
erased device, no 0xFFs in the data file(s) need to be programmed.
content at the selected address at serial output PDO. When reading the Flash memory,
use the instruction Load Extended Address Byte to define the upper address byte,
which is not included in the Read Program Memory instruction. The extended address
byte is stored until the command is re-issued, i.e., the command needs only be issued
for the first page, and when crossing the 64KWord boundary.
operation.
Set RESET to “1”.
Turn V
CC
power off.
WD_EEPROM
CC
before issuing the next byte. (See
and GND while RESET and SCK are set to “0”. In some sys-
WD_FLASH
before issuing the next page. (See
Minimum Wait Delay
4.5 ms
9.0 ms
9.0 ms
Table
29-15.) In a chip
RDY/BSY
7593K–AVR–11/09
Table 29-
) is not