DF2398TE20V Renesas Electronics America, DF2398TE20V Datasheet - Page 637
![IC H8S MCU FLASH 256K 120TQFP](/photos/12/21/122170/df2398te20v_sml.jpg)
DF2398TE20V
Manufacturer Part Number
DF2398TE20V
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2398TE20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
YR0K42378FC000BA - KIT EVAL FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2398TE20V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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- Download datasheet (5Mb)
Table 19-22 AC Characteristics when Entering Another Mode from Memory Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Address
Note: Data is latched on the rising edge of WE.
CC
Data
= 5.0 V 10%, V
WE
OE
CE
Figure 19-25 Memory Read Mode Timing Waveforms after Command Write
SS
= 0 V, T
t
ces
Command write
t
f
t
a
Symbol
t
t
t
t
t
t
t
t
wep
nxtc
ceh
ces
dh
ds
wep
r
f
= 25 C 5 C
t
ds
H'00
t
dh
t
t
ceh
r
Min
20
0
0
50
50
70
—
—
t
nxtc
Max
—
—
—
—
—
—
30
30
Memory read mode
Address stable
Rev.6.00 Oct.28.2004 page 607 of 1016
Data
Unit
ns
ns
ns
ns
ns
ns
ns
s
REJ09B0138-0600H
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