DF2398TE20V Renesas Electronics America, DF2398TE20V Datasheet - Page 795
![IC H8S MCU FLASH 256K 120TQFP](/photos/12/21/122170/df2398te20v_sml.jpg)
DF2398TE20V
Manufacturer Part Number
DF2398TE20V
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2398TE20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
YR0K42378FC000BA - KIT EVAL FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2398TE20V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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22.7.5
Table 22-42 lists the D/A conversion characteristics
Table 22-42 D/A Conversion Characteristics
Condition B: V
Condition C: V
22.7.6
Table 22-43 shows the flash memory characteristics.
Table 22-43 Flash Memory Characteristics (1)
Conditions:
D/A Conversion Characteristics
Flash Memory Characteristics
Item
Resolution
Conversion time
Absolute accuracy
Item
Programming time*
Erase time*
Reprogramming count
Programming Wait time after SWE bit
ø = 2 to 20 MHz, T
T
V
T
V
T
(Programming/erasing operating temperature, wide-range specifications)
a
a
CC
CC
SS
a
= –40 to +85 C (wide-range specifications)
= –40 to +85 C (wide-range specifications)
CC
= 0 to +75 C (Programming/erasing operating temperature, regular specifications), T
= AV
= AV
= AV
= 5.0 V 10%, AV
1
SS
*
CC
CC
3
*
setting*
Wait time after PSU bit
setting*
Wait time after P bit
setting*
Wait time after P bit clear*
Wait time after PSU bit
clear*
Wait time after PV bit
setting*
Wait time after H'FF dummy
write*
= 0 V, ø = 2 to 13 MHz, T
= 5.0 V 10%, V
= 3.0 V to 5.5 V, V
5
1
*
1
1
2
a
*
1
1
1
1
4
*
= –20 to +75 C (regular specifications),
4
Min
8
—
—
—
CC
= 5.0 V 10%, V
Condition B
ref
Typ
8
—
—
ref
1.0
= 4.5 V to AV
= 3.0 V to AV
1
a
Max
8
10
= –20 to +75 C (regular specifications),
1.5
1.0
Symbol Min
t
t
N
x
y
z
P
E
WEC
ref
Min
8
—
—
—
CC
= 4.5 V to AV
CC
, V
—
—
—
10
50
150
10
10
4
2
,
Condition C
SS
Typ
8
—
—
= AV
2.0
Typ
10
100
—
—
—
—
—
—
—
—
SS
Max
8
10
CC
= 0 V,
3.0
2.0
Max
200
1200
100
—
—
200
—
—
—
—
, V
SS
Rev.6.00 Oct.28.2004 page 765 of 1016
Unit
bit
LSB
LSB
= AV
s
Unit
ms/32 bytes
ms/block
Times
s
s
s
s
s
s
s
SS
Test Conditions
20-pF capacitive
load
2-M resistive load
4-M resistive load
= 0V
Test
Condition
REJ09B0138-0600H
a
= 0 to + 85 C
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