MCL908QY2CDTE Freescale Semiconductor, MCL908QY2CDTE Datasheet - Page 161

• Manufacturer Part Number: MCL908QY2CDTE
• Description: IC MCU 8BIT 1.5K FLASH 16-TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MCL908QY2CDTE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 2MHz
• Peripherals: LVD, POR, PWM
• Number Of I /o: 13
• Program Memory Size: 1.5KB (1.5K x 8)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.4 V ~ 3.6 V
• Data Converters: A/D 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -

16.12 Memory Characteristics
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH PGM/ERASE supply voltage (V
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program setup time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance
FLASH data retention time
1. f
2. t
3. t
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
<1 k cycles
>1 k cycles
clearing HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Read
RCV
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
(4)
Characteristic
(5)
NVS
MC68HLC908QY/QT Family Data Sheet, Rev. 3
+ t
DD
NVH
)
+ t
PGS
+ (t
PROG
x 32) ≤ t
V
PGM/ERASE
Symbol
f
t
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVS
NVH
PGS
HV
RDR
—
—
—
(3)
(2)
(1)
maximum.
10 k
Min
100
1.3
2.7
0.9
3.6
10
30
15
—
1
0
4
5
5
1
100 k
Typ
100
—
—
—
—
—
—
—
—
—
—
—
—
1
4
Memory Characteristics
Max
3.6
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
2
4
Cycles
Years
MHz
MHz
Unit
ms
ms
ms
ms
µs
µs
µs
µs
µs
V
V
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