ATA6603P-PLQW Atmel, ATA6603P-PLQW Datasheet - Page 290

MCU W/LIN TXRX REG WTCHDG 48-QFN

ATA6603P-PLQW

Manufacturer Part Number
ATA6603P-PLQW
Description
MCU W/LIN TXRX REG WTCHDG 48-QFN
Manufacturer
Atmel
Series
AVR® ATA66 LIN-SBCr
Datasheet

Specifications of ATA6603P-PLQW

Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
23
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-QFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
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ATA6603P-PLQW
Manufacturer:
ATMEL
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ATA6603P-PLQW
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4.23.7
4.23.7.1
4.23.7.2
290
ATA6602/ATA6603
Self-Programming the Flash
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
The program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page buf-
fer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
Alternative 1, fill the buffer before a Page Erase
Alternative 2, fill the buffer after Page Erase
If only a part of the page needs to be changed, the rest of the page must be stored (for example
in the temporary page buffer) before the erase, and then be rewritten. When using alternative 1,
the Boot Loader provides an effective Read-Modify-Write feature which allows the user software
to first read the page, do the necessary changes, and then write back the modified data. If alter-
native 2 is used, it is not possible to read the old data while loading since the page is already
erased. The temporary page buffer can be accessed in a random sequence. It is essential that
the page address used in both the Page Erase and Page Write operation is addressing the same
page. See
code example.
To execute Page Erase, set up the address in the Z-pointer, write “X0000011” to SPMCSR and
execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is ignored.
The page address must be written to PCPAGE in the Z-register. Other bits in the Z-pointer will
be ignored during this operation.
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR. The
content of PCWORD in the Z-register is used to address the data in the temporary buffer. The
temporary buffer will auto-erase after a Page Write operation or by writing the RWWSRE bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
• Fill temporary page buffer
• Perform a Page Erase
• Perform a Page Write
• Perform a Page Erase
• Fill temporary page buffer
• Perform a Page Write
• Page Erase to the RWW section: The NRWW section can be read during the Page Erase.
• Page Erase to the NRWW section: The CPU is halted during the operation.
“Simple Assembly Code Example for a Boot Loader” on page 294
for an assembly
4921E–AUTO–09/09

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