F272-BAGE-T-TR STMicroelectronics, F272-BAGE-T-TR Datasheet - Page 32

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F272-BAGE-T-TR

Manufacturer Part Number
F272-BAGE-T-TR
Description
MCU 16BIT 256K FLASH 144-TQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of F272-BAGE-T-TR

Core Processor
ST10
Core Size
16-Bit
Speed
40MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-TQFP, 144-VQFP
Data Bus Width
16 bit
Data Ram Size
20 KB
Interface Type
ASC, CAN, I2C, SSC
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
111
Number Of Timers
4
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 24 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
F272-BAGE-T-TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Internal Flash memory
5.4.2
32/182
Flash control register 0 high
The Flash Control Register 0 High (FCR0H) together with the Flash Control Register 0 Low
(FCR0L) is used to enable and to monitor all the write operations on the IFLASH. The user
has no access in write mode to the Test-Flash (B0TF). Besides, Test-Flash block is seen by
the user in Bootstrap Mode only.
FCR0H (0x08 0002)
Table 8.
SPR
SER
DWPG
WPG
WMS SUSP
RW
15
Bit
RW
14
WPG DWPG SER
RW
13
Flash control register 0 high
Set Protection
This bit must be set to select the Set Protection operation. The Set Protection
operation allows to program 0s in place of 1s in the Flash Non Volatile Protection
Registers. The Flash Address in which to program must be written in the FARH/L
registers, while the Flash Data to be programmed must be written in the FDR0H/L
before starting the execution by setting bit WMS. A sequence error is flagged by bit
SEQER of FER if the address written in FARH/L is not in the range 0x0E8FB0-
0x08DFBF. SPR bit is automatically reset at the end of the Set Protection
operation.
Sector Erase
This bit must be set to select the Sector Erase operation in the Flash modules. The
Sector Erase operation allows to erase all the Flash locations to value 0xFF. From
1 to all the sectors of the same Bank (excluded Test-Flash for Bank B0) can be
selected to be erased through bits BxFy of FCR1H/L registers before starting the
execution by setting bit WMS. It is not necessary to pre-program the sectors to
0x00, because this is done automatically. SER bit is automatically reset at the end
of the Sector Erase operation.
Double Word Program
This bit must be set to select the Double Word (64 bits) Program operation in the
Flash module. The Double Word Program operation allows to program 0s in place
of 1s. The Flash Address in which to program (aligned with even words) must be
written in the FARH/L registers, while the 2 Flash Data to be programmed must be
written in the FDR0H/L registers (even word) and FDR1H/L registers (odd word)
before starting the execution by setting bit WMS. DWPG bit is automatically reset
at the end of the Double Word Program operation.
Word Program
This bit must be set to select the Word (32 bits) Program operation in the Flash
module. The Word Program operation allows to program 0s in place of 1s. The
Flash Address to be programmed must be written in the FARH/L registers, while
the Flash Data to be programmed must be written in the FDR0H/L registers before
starting the execution by setting bit WMS. WPG bit is automatically reset at the
end of the Word Program operation.
RW
12
RW
11
10
reserved
9
FCR
SPR
RW
8
7
Function
6
5
reserved
4
ST10F272B/ST10F272E
3
Reset value:
2
1
0000h
0

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