MC9S08GT16ACFBE Freescale Semiconductor, MC9S08GT16ACFBE Datasheet - Page 262

IC MCU 16K FLASH 2K RAM 44-QFP

MC9S08GT16ACFBE

Manufacturer Part Number
MC9S08GT16ACFBE
Description
IC MCU 16K FLASH 2K RAM 44-QFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08GT16ACFBE

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
36
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFP
Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
40MHz
Interface Type
I2C/SCI/SPI
Total Internal Ram Size
2KB
# I/os (max)
36
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
1.8V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Package Type
PQFP
Processor Series
S08GT
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
2 KB
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
36
Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
M68EVB908GB60E, M68DEMO908GB60E
Minimum Operating Temperature
- 40 C
For Use With
M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Compliant

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Electrical Characteristics
A.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification
A.6
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
262
Human Body
Machine
Charge Device
Model
Latch-Up
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
Model
Supply Voltage
Temperature
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Characteristic
Table A-4. ESD and Latch-up Test Conditions
Table A-5. MCU Operating Conditions
MC9S08GT16A/GT8A Data Sheet, Rev. 1
Description
M
C
Min
–40
–40
1.8
Typ
Symbol
R1
R1
R1
C
C
C
Max
125
3.6
85
Value
1500
–2.5
100
200
7.5
3
0
3
Freescale Semiconductor
Unit
°C
V
Unit
pF
pF
pF
V
V

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