MC9S08GT16ACFBE Freescale Semiconductor, MC9S08GT16ACFBE Datasheet - Page 48

• Manufacturer Part Number: MC9S08GT16ACFBE
• Description: IC MCU 16K FLASH 2K RAM 44-QFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08GT16ACFBE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 36
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-QFP
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 40MHz
• Interface Type: I2C/SCI/SPI
• Total Internal Ram Size: 2KB
• # I/os (max): 36
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Package Type: PQFP
• Processor Series: S08GT
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 36
• Operating Supply Voltage: 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: M68EVB908GB60E, M68DEMO908GB60E
• Minimum Operating Temperature: - 40 C
• For Use With: M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

Memory
only way to disengage security is by mass erasing the FLASH if needed (normally through the background
debug interface) and verifying that FLASH is blank. To avoid returning to secure mode after the next reset,
program the security bits (SEC01:SEC00) to the unsecured state (1:0).
4.3
The MC9S08GT16A/GT8A includes static RAM. The locations in RAM below 0x0100 can be accessed
using the more efficient direct addressing mode, and any single bit in this area can be accessed with the bit
manipulation instructions (BCLR, BSET, BRCLR, and BRSET). Locating the most frequently accessed
program variables in this area of RAM is preferred.
The RAM retains data when the MCU is in low-power wait, stop2, or stop3 mode. At power-on or after
wakeup from stop1, the contents of RAM are uninitialized. RAM data is unaffected by any reset provided
that the supply voltage does not drop below the minimum value for RAM retention.
For compatibility with older M68HC05 MCUs, the HCS08 resets the stack pointer to 0x00FF. In the
MC9S08GT16A/GT8A, it is usually best to re-initialize the stack pointer to the top of the RAM so the
direct page RAM can be used for frequently accessed RAM variables and bit-addressable program
variables. Include the following 2-instruction sequence in your reset initialization routine (where RamLast
is equated to the highest address of the RAM in the Freescale-provided equate file).
When security is enabled, the RAM is considered a secure memory resource and is not accessible through
BDM or through code executing from non-secure memory. See
description of the security feature.
4.4
The FLASH memory is intended primarily for program storage. In-circuit programming allows the
operating program to be loaded into the FLASH memory after final assembly of the application product.
It is possible to program the entire array through the single-wire background debug interface. Because no
special voltages are needed for FLASH erase and programming operations, in-application programming
is also possible through other software-controlled communication paths. For a more detailed discussion of
in-circuit and in-application programming, refer to the HCS08 Family Reference Manual, Volume I,
Freescale Semiconductor document order number HCS08RMV1/D.
4.4.1
Features of the FLASH memory include:
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FLASH Size
— MC9S08GT16A — 16384 bytes (32 pages of 512 bytes each)
— MC9S08GT8A — 8192 bytes (16 pages of 512 bytes each)
Single power supply program and erase down to 1.8 V
Command interface for fast program and erase operation
Up to 100,000 program/erase cycles at typical voltage and temperature
RAM
FLASH
Features
LDHX
TXS
#RamLast+1
MC9S08GT16A/GT8A Data Sheet, Rev. 1
;point one past RAM
;SP<-(H:X-1)
Section 4.5,
“Security,”
Freescale Semiconductor
for a detailed