MC9S08GT16ACFBE Freescale Semiconductor, MC9S08GT16ACFBE Datasheet - Page 51

• Manufacturer Part Number: MC9S08GT16ACFBE
• Description: IC MCU 16K FLASH 2K RAM 44-QFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08GT16ACFBE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 36
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-QFP
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 40MHz
• Interface Type: I2C/SCI/SPI
• Total Internal Ram Size: 2KB
• # I/os (max): 36
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Package Type: PQFP
• Processor Series: S08GT
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 36
• Operating Supply Voltage: 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: M68EVB908GB60E, M68DEMO908GB60E
• Minimum Operating Temperature: - 40 C
• For Use With: M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

4.4.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if the following two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
Freescale Semiconductor
1. The next burst program command has been queued before the current program operation has
2. The next sequential address selects a byte on the same physical row as the current byte being
completed.
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
Figure 4-2. FLASH Program and Erase Flowchart
MC9S08GT16A/GT8A Data Sheet, Rev. 1
0
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
AND CLEAR FCBEF
TO LAUNCH COMMAND
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FPVIOL OR
FACCERR ?
FACCERR ?
FCCF ?
START
DONE
1
NO
1
(Note 1)
(Note 2)
YES
0
Note 2: Wait at least four bus cycles
Note 1: Required only once after reset.
ERROR EXIT
before checking FCBEF or FCCF.
Memory
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