S9S12HY64J0MLL Freescale Semiconductor, S9S12HY64J0MLL Datasheet - Page 615
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S9S12HY64J0MLL
Manufacturer Part Number
S9S12HY64J0MLL
Description
MCU 64K FLASH AUTO 100-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet
1.S9S12HA32J0CLL.pdf
(792 pages)
Specifications of S9S12HY64J0MLL
Core Processor
HCS12
Core Size
16-Bit
Speed
32MHz
Connectivity
CAN, EBI/EMI, I²C, IrDA, LIN, SCI, SPI
Peripherals
LCD, Motor control PWM, POR, PWM, WDT
Number Of I /o
80
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
100-LQFP
Controller Family/series
S12
No. Of I/o's
80
Ram Memory Size
4KB
Cpu Speed
64MHz
No. Of Timers
2
Rohs Compliant
Yes
Processor Series
S12HY
Core
HCS12
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
DEMO9S12HY64
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S9S12HY64J0MLL
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
S9S12HY64J0MLL
Manufacturer:
FREESCALE
Quantity:
20 000
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17.1.2
17.1.2.1
17.1.2.2
17.1.2.3
17.1.3
The block diagram of the Flash module is shown in
Freescale Semiconductor
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64 Kbytes of P-Flash memory composed of one 64 Kbyte Flash block divided into 128 sectors of
512 bytes
Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Ability to read the P-Flash memory while programming a word in the D-Flash memory
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
4 Kbytes of D-Flash memory composed of one 4 Kbyte Flash block divided into 16 sectors of 256
bytes
Single bit fault correction and double bit fault detection within a word during read operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and word program operation
Protection scheme to prevent accidental program or erase of D-Flash memory
Ability to program up to four words in a burst sequence
No external high-voltage power supply required for Flash memory program and erase operations
Interrupt generation on Flash command completion and Flash error detection
Security mechanism to prevent unauthorized access to the Flash memory
Features
Block Diagram
P-Flash Features
D-Flash Features
Other Flash Module Features
MC9S12HY/HA-Family Reference Manual, Rev. 1.04
Figure
17-1.
64 KByte Flash Module (S12FTMRC64K1V1)
615
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