DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 597
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
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16.3
When the RAME bit is set to 1, accesses to addresses H'FFDC00 to H'FFFBFF * are directed to the
on-chip RAM. When the RAME bit is cleared to 0, the off-chip address space is accessed.
Since the on-chip RAM is connected to the CPU by an internal 16-bit data bus, it can be written to
and read in byte or word units. Each type of access can be performed in one state.
Even addresses use the upper 8 bits, and odd addresses use the lower 8 bits. Word data must start
at an even address.
Note: * The amount of on-chip RAM is 16 kbytes in the H8S/2319C, 8 kbytes in the H8S/2319,
16.4
DTC register information can be located in addresses H'FFF800 to H'FFFBFF. When the DTC is
used, the RAME bit must not be cleared to 0.
H8S/2318, H8S/2317, H8S/2317S, H8S/2316S, H8S/2315, and H8S/2312S, 4 kbytes in
the H8S/2314.
Operation
Usage Note
Rev.7.00 Feb. 14, 2007 page 563 of 1108
REJ09B0089-0700
Section 16 RAM
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