DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 857

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

(2) Control Signal Timing
Table 20.5 Control Signal Timing
Condition A: V
Condition B: V
Item
RES setup time
RES pulse width
NMI setup time
NMI hold time
NMI pulse width (in recovery
from software standby mode)
IRQ setup time
IRQ hold time
IRQ pulse width (in recovery
from software standby mode)
0 V, φ = 2 MHz to 20 MHz, T
T
0 V, φ = 2 MHz to 25 MHz, T
T
a
a
CC
CC
= –40°C to 85°C (wide-range specifications)
= –40°C to 85°C (wide-range specifications)
= 2.7 V to 3.6 V, AV
= 3.0 V to 3.6 V, AV
Symbol
t
t
t
t
t
t
t
t
RESS
RESW
NMIS
NMIH
NMIW
IRQS
IRQH
IRQW
CC
CC
= 2.7 V to 3.6 V, V
= 3.0 V to 3.6 V, V
a
a
Min
200
20
150
10
200
150
10
200
= –20°C to 75°C (regular specifications),
= –20°C to 75°C (regular specifications),
Condition A
—
—
—
—
—
—
—
—
Max
Rev.7.00 Feb. 14, 2007 page 823 of 1108
Section 20 Electrical Characteristics
ref
ref
Min
200
20
150
10
200
150
10
200
Condition B
= 2.7 V to AV
= 3.0 V to AV
Max
—
—
—
—
—
—
—
—
Unit
ns
t
ns
ns
CC
CC
cyc
REJ09B0089-0700
, V
, V
SS
SS
Test
Conditions
Figure 20.4
Figure 20.5
= AV
= AV
SS
SS
=
=