DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 731

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

Table 17.49 Register/Parameter and Target Mode
Programming/
erasing interface
registers
Programming/
erasing interface
parameter
RAM emulation
Notes: 1. The setting is required when programming or erasing user MAT in user boot mode.
17.23
17.23.1 Programming/Erasing Interface Register
The programming/erasing interface registers are as described below. They are all 8-bit registers
that can be accessed in byte. Except for the FLER bit in FCCS, these registers are initialized at a
power-on reset, in hardware standby mode, or in software standby mode. The FLER bit is not
initialized in software standby mode.
2. The setting may be required according to the combination of initiation mode and read
Register Description of Flash Memory
target MAT.
FCCS
FPCS
PECS
FKEY
FMATS
FPFR
FPEFEQ
FMPAR
FMPDR
FEBS
RAMER
—
Download
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—
—
—
—
Initiali-
zation
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—
—
—
—
—
—
—
—
Program-
ming
—
—
—
—
—
—
Rev.7.00 Feb. 14, 2007 page 697 of 1108
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1
Erasure
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*
1
Read
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REJ09B0089-0700
Section 17 ROM
*
2
RAM
Emulation
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