DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 553
![MCU 3V 256K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 553 of 843
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17.7.3
In error protection, an error is detected when MCU runaway occurs during flash memory
programming/erasing *
algorithm, and the program/erase operation is aborted. Aborting the program/erase operation
prevents damage to the flash memory due to overprogramming or overerasing.
If the MCU malfunctions during flash memory programming/erasing, the FLER bit is set to 1 in
the flash memory status register (FLMSR2) and the error protection state is entered. FLMCR1,
FLMCR2, EBR1, and EBR2 settings *
the point at which the error occurred. Program mode or erase mode cannot be re-entered by re-
setting the P or E bit in FLMCR. However, PV and EV bit setting is enabled, and a transition can
be made to verify mode *
FLER bit setting conditions are as follows:
1. When flash memory is read during programming/erasing (including a vector read or instruction
2. Immediately after the start of exception handling during programming/erasing (excluding
3. When a SLEEP instruction (including software standby) is executed during
4. When the bus is released during programming/erasing
Notes: 1. State in which the P bit or E bit in FLMCR1 is set to 1. Note that NMI input is disabled
Figure 17.12 shows the flash memory state transition diagram.
fetch)
reset, illegal instruction, trap instruction, and division-by-zero exception handling)
programming/erasing
Error protection is released only by a
2. It is possible to perform a program-verify operation on the 128 bytes being
3. FLMCR1, EBR1, and EBR2 can be written to. However, the registers are initialized if
Error Protection
in this state.
programmed, or an erase-verify on the block being erased.
a transition is made to software standby mode while in the error protection state.
1
, or operation is not performed in accordance with the program/erase
2
.
3
are retained, but program mode or erase mode is aborted at
R E S
Section 17 Flash Memory [H8/3026F-ZTAT Version]
pin or WDT reset, or in hardware standby mode.
Rev. 2.00 Sep 20, 2005 page 513 of 800
REJ09B0260-0200
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