M5275EVBE Freescale Semiconductor, M5275EVBE Datasheet - Page 20

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M5275EVBE

Manufacturer Part Number
M5275EVBE
Description
MCF5274/75 EVALUATION BO
Manufacturer
Freescale Semiconductor
Series
ColdFire®r
Type
Microprocessorr
Datasheet

Specifications of M5275EVBE

Contents
Module and Misc Hardware
Silicon Manufacturer
Freescale
Core Architecture
Coldfire
Core Sub-architecture
Coldfire V2
Silicon Core Number
MCF52
Silicon Family Name
MCF527x
Rohs Compliant
Yes
For Use With/related Products
MCF5274, MCF5275
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics
8.3
20
For most applications P
neglected) is:
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring P
equilibrium) for a known T
and (2) iteratively for any value of T
ESD Protection
1
2
Characteristics
ESD Target for Human Body Model
ESD Target for Machine Model
HBM Circuit Description
MM Circuit Description
Number of pulses per pin (HBM)
Number of pulses per pin (MM)
Interval of Pulses
P
P
INT
I/O
positive pulses
negative pulses
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive
Grade Integrated Circuits.
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the
device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
positive pulses
negative pulses
MCF5275 Integrated Microprocessor Family Hardware Specification, Rev. 4
= I
= Power Dissipation on Input and Output Pins — User Determined
I/O
DD
K = P
A
< P
. Using this value of K, the values of P
× V
INT
D
DD
Table 9. ESD Protection Characteristics
× (T
, Watts - Chip Internal Power
and can be ignored. An approximate relationship between P
A
A
.
+ 273 °C) + Θ
P
D
=
K
÷
(
T
J
JMA
+
273°C
× P
D
)
2
D
(2)
(3)
and T
Symbol
R
R
HBM
MM
series
series
C
C
J
can be obtained by solving equations (1)
1, 2
Value
2000
1500
200
100
200
0
1
1
3
3
1
D
Freescale Semiconductor
and T
Units
sec
pF
pF
V
V
Ω
Ω
J
(if P
I/O
D
is
(at

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