IXA33IF1200HB IXYS SEMICONDUCTOR, IXA33IF1200HB Datasheet
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IXA33IF1200HB
Specifications of IXA33IF1200HB
Related parts for IXA33IF1200HB
IXA33IF1200HB Summary of contents
Page 1
... 1200 V CEK V = 900 ± Ω non-repetitive G Data according to IEC 60747and per diode unless otherwise specified IXA33IF1200HB C25 1200 CES V 1 CE(sat)typ Package: ● Housing: TO-247 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant min. typ. max. Unit = 25°C 1200 = 25°C ±20 = 25° ...
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... IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Conditions T = 25° 100 ° 600 / 600 A/µ Data according to IEC 60747and per diode unless otherwise specified IXA33IF1200HB Ratings min. typ. max 25°C 1.95 2 125 °C 1. 125 °C VJ 350 0.9 0.7 Ratings min ...
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... IXA 33 IF 1200 HB Standard IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Conditions Part Name Marking on Product IXA33IF1200HB Data according to IEC 60747and per diode unless otherwise specified IXA33IF1200HB Ratings min. typ. -55 -55 0.25 0.8 20 ...
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... S E1 IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified IXA33IF1200HB Sym. Inches Millimeter min. max. min. A 0.185 0.209 4.70 A1 0.087 0.102 2.21 A2 0.059 0.098 1.50 D ...
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... E 3 [mJ [A] C Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved = 125° off 40 50 Data according to IEC 60747and per diode unless otherwise specified IXA33IF1200HB 125° [ [V] CE Fig. 2 Typ. output characteristics ...
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... A 600 500 400 [ns] 300 200 100 vs. di/ thJC [K/ 0.1 versus di/dt rec Data according to IEC 60747and per diode unless otherwise specified IXA33IF1200HB 125° 600 300 400 500 600 700 800 900 1000 1100 di /dt [A/µs] F Fig. 8 Typ. reverse recov.charge ...