IXA33IF1200HB IXYS SEMICONDUCTOR, IXA33IF1200HB Datasheet - Page 6

• Manufacturer Part Number: IXA33IF1200HB
• Description: IGBT,1200V,58A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA33IF1200HB

• Transistor Type: IGBT
• Dc Collector Current: 58A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 250W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 250W

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
I
[A]
[A]
[mJ]
E
RR
I
F
rec
2.0
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
300 400 500 600 700 800 900 1000 1100
300 400 500 600 700 800 900 1000 1100
0.0
Fig.11 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
VJ
R
VJ
R
0.5
= 125°C
= 600 V
= 125°C
= 600 V
T
T
VJ
VJ
= 125°C
= 25°C
1.0
di
di
F
F
V
/dt [A/µs]
/dt [A/µs]
F
1.5
[V]
2.0
rec
versus di/dt
RM
vs. di/dt
2.5
F
60 A
30 A
15 A
60 A
30 A
15 A
3.0
Data according to IEC 60747and per diode unless otherwise specified
[K/W]
[ns]
Z
t
rr
thJC
[µC]
Q
rr
700
600
500
400
300
200
100
0.1
0.001
7
6
5
4
3
2
1
0
1
300 400 500 600 700 800 900 1000 1100
300 400 500 600 700 800 900 1000 1100
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
T
V
VJ
R
0.01
= 125°C
= 600 V
di
di
IXA33IF1200HB
1 0.116 0.0006 0.16 0.0005
2 0.1
3 0.112 0.006
4 0.172 0.05
F
F
Inverter-IGBT
/dt [A/µs]
t
/dt [A/µs]
p
0.1
R
[s]
i
0.2
rr
t
versus di/dt
i
T
V
Inverter-FRD
VJ
R
1
0.12 0.004
0.15 0.02
0.27 0.15
= 125°C
= 600 V
rr
R
vs. di/dt
i
Diode
IGBT
60 A
30 A
15 A
60 A
30 A
15 A
20100702b
t
i
10