IXA33IF1200HB IXYS SEMICONDUCTOR, IXA33IF1200HB Datasheet - Page 2

• Manufacturer Part Number: IXA33IF1200HB
• Description: IGBT,1200V,58A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA33IF1200HB

• Transistor Type: IGBT
• Dc Collector Current: 58A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 250W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 250W

Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
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Diode
F25
F
RM
rr
Equivalent Circuits for Simulation
1
2
3
4
rec(off)
thJC
100
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
Conditions
T = 25°C
T =
I =
V =
di /dt = -
I =
C4
F
F
C
C
R
F
100
30
30
600
Data according to IEC 60747and per diode unless otherwise specified
A
A
°C
V
600
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA33IF1200HB
min.
min.
0.116
0.1
0.112
0.172
0.0006
0.2
0.006
0.05
IGBT
Ratings
Ratings
typ.
typ.
1.95
1.95
350
3.5
0.9
30
max.
max.
1.25
28.3
0.16
0.12
0.15
0.27
0.0005
0.004
0.02
0.15
2.2
0.7
1.1
Diode
60
33
55
20100702b
Unit
K/W
Unit
m
m
µC
mJ
ns
Ω
Ω
A
A
V
V
A
V
V