IXA33IF1200HB IXYS SEMICONDUCTOR, IXA33IF1200HB Datasheet - Page 3

• Manufacturer Part Number: IXA33IF1200HB
• Description: IGBT,1200V,58A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA33IF1200HB

• Transistor Type: IGBT
• Dc Collector Current: 58A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 250W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 250W

Symbol
T
T
R
Weight
M
F
IXYS reserves the right to change limits, conditions and dimensions.
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C
VJ
stg
Package TO-247
thCH
D
Marking on product
Assembly Code
DateCode
Logo
Definition
Virtual junction temperature
Storage temperature
Thermal resistance case to heatsink
Mounting torque
Mounting force with clip
Product Marking
XXXXXX
YYWW
abcdef
Standard
Ordering
IXA 33 IF 1200 HB
Part Name
Conditions
Marking on Product
IXA33IF1200HB
Data according to IEC 60747and per diode unless otherwise specified
Delivering Mode
Part number
1200
Base Qty Code Key
HB
33
IF
X
A
I
=
=
=
=
=
=
=
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Copack
Reverse Voltage [V]
TO-247AD (3)
IXA33IF1200HB
min.
-55
-55
0.8
20
Ratings
typ.
0.25
6
max.
150
150
120
1.2
20100702b
Unit
K/W
Nm
°C
°C
N
g