IXA33IF1200HB IXYS SEMICONDUCTOR, IXA33IF1200HB Datasheet - Page 4

• Manufacturer Part Number: IXA33IF1200HB
• Description: IGBT,1200V,58A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA33IF1200HB

• Transistor Type: IGBT
• Dc Collector Current: 58A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 250W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 250W

IXYS reserves the right to change limits, conditions and dimensions.
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Q
2x
L1
2x
E2
S
b2
Ø
P
1
b4
2x
e
E1
2
E
Ø
3
P1
3x
D1
4
D
D2
L
b
C
Data according to IEC 60747and per diode unless otherwise specified
A
A1
A2
Sym.
A
A1
A2
D
E
E2
e
L
L1
Ø P
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
min.
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.780 0.800
0.140 0.144
0.212 0.244
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.215 BSC
0.242 BSC
-
-
Inches
max.
0.177
0.29
IXA33IF1200HB
-
-
20.79 21.45
15.48 16.24
19.80 20.30
13.07
13.45
Millimeter
4.70
2.21
1.50
4.31
3.55
5.38
0.99
1.65
2.59
0.38
0.51
min.
5.46 BSC
6.14 BSC
-
-
max.
5.30
2.59
2.49
5.48
4.49
3.65
6.19
1.40
2.39
3.43
0.89
1.35
7.39
-
20100702b
-