MM908E625ACDWB Freescale Semiconductor, MM908E625ACDWB Datasheet - Page 11

IC QUAD HALF BRDG MCU/LIN 54SOIC

MM908E625ACDWB

Manufacturer Part Number
MM908E625ACDWB
Description
IC QUAD HALF BRDG MCU/LIN 54SOIC
Manufacturer
Freescale Semiconductor

Specifications of MM908E625ACDWB

Applications
Automotive Mirror Control
Core Processor
HC08
Program Memory Type
FLASH (16 kB)
Controller Series
908E
Ram Size
512 x 8
Interface
SCI, SPI
Number Of I /o
13
Voltage - Supply
8 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
54-SOIC (0.300", 7.50mm Width) Exposed Pad
Program Memory Size
16 KB
Number Of Programmable I/os
54
Number Of Timers
16
Operating Supply Voltage
- 18 V to + 28 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MM908E625ACDWB
Manufacturer:
FREESCALE Semiconductor
Quantity:
26
Table 4. Dynamic Electrical Characteristics
microcontroller chip. Characteristics noted under conditions 9.0 V
Typical values noted reflect the approximate parameter mean at T
Analog Integrated Circuit Device Data
Freescale Semiconductor
LIN PHYSICAL LAYER
HALL-EFFECT SENSOR INPUTS (H1:H3)
AUTONOMOUS WATCHDOG (AWD)
Notes
Propagation Delay
Output Falling Edge Slew Rate
Output Rising Edge Slew Rate
LIN Rise/Fall Slew Rate Symmetry
Propagation Delay
AWD Oscillator Period
AWD Period Low = 512 t
AWD Period High = 256 t
AWD Cyclic Wake-Up On Time
12.
13.
14.
All characteristics are for the analog chip only. Please refer to the specification for 68HC908EY16 for characteristics of the
TXD LOW to LIN LOW
TXD HIGH to LIN HIGH
LIN LOW to RXD LOW
LIN HIGH to RXD HIGH
TXD Symmetry
RXD Symmetry
80% to 20%
20% to 80%, R
All LIN characteristics are for initial LIN slew rate selection (20 kBaud) (SRS0:SRS1= 00).
See
See
Figure
Figure
BUS
2.
3.
(12)
,
> 1.0 kΩ, C
(13)
OSC
OSC
Characteristic
(12)
(12)
DYNAMIC ELECTRICAL CHARACTERISTICS
BUS
,
,
(14)
(12)
(14)
< 10 nF
,
(14)
A
V
= 25°C under nominal conditions unless otherwise noted.
SUP
t
t
t
TXD-LIN-
t
TXD-LIN-
LIN-RXD-
t
t
AWDHPON
t
Symbol
TXD-SYM
RXD-SYM
t
t
LIN-RXD-
t
AWDPH
AWDPL
t
SR
SR
HPPD
16 V, -40°C
SR
high
OSC
R
F
S
high
low
low
DYNAMIC ELECTRICAL CHARACTERISTICS
Min
-2.0
-2.0
-1.0
-2.0
1.0
8.0
16
T
J
125°C unless otherwise noted.
Typ
-2.0
4.0
4.0
2.0
1.0
40
22
11
90
Max
-3.0
6.0
6.0
8.0
8.0
2.0
2.0
3.0
2.0
28
14
V/µs
V/µs
908E625
Unit
ms
ms
µs
µs
µs
µs
µs
11

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