MM908E625ACDWB Freescale Semiconductor, MM908E625ACDWB Datasheet - Page 7

IC QUAD HALF BRDG MCU/LIN 54SOIC

MM908E625ACDWB

Manufacturer Part Number
MM908E625ACDWB
Description
IC QUAD HALF BRDG MCU/LIN 54SOIC
Manufacturer
Freescale Semiconductor

Specifications of MM908E625ACDWB

Applications
Automotive Mirror Control
Core Processor
HC08
Program Memory Type
FLASH (16 kB)
Controller Series
908E
Ram Size
512 x 8
Interface
SCI, SPI
Number Of I /o
13
Voltage - Supply
8 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
54-SOIC (0.300", 7.50mm Width) Exposed Pad
Program Memory Size
16 KB
Number Of Programmable I/os
54
Number Of Timers
16
Operating Supply Voltage
- 18 V to + 28 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MM908E625ACDWB
Manufacturer:
FREESCALE Semiconductor
Quantity:
26
Table 3. Static Electrical Characteristics
microcontroller chip. Characteristics noted under conditions 9.0 V ≤ V
Typical values noted reflect the approximate parameter mean at T
Analog Integrated Circuit Device Data
Freescale Semiconductor
SUPPLY VOLTAGE
SUPPLY CURRENT
DIGITAL INTERFACE RATINGS (ANALOG DIE)
Notes
Nominal Operating Voltage
NORMAL Mode
STOP Mode
Output Terminals
Output Terminals BEMF, RXD
Output Terminal RXD–Capacitance
Input Terminals
Input Terminals
Terminals
Terminal
Terminals FGEN, MOSI, SPSCK–Pulldown Resistor
Terminal TXD–Pullup Current Source
All characteristics are for the analog chip only. Refer to the 68HC908EY16 specification for characteristics of the
8.
9.
V
Internal Oscillator at 32 MHz (8.0 MHz Bus Frequency), SPI, ESCI,
ADC Enabled
V
Low-State Output Voltage (I
High-State Output Voltage (I
Low-State Output Voltage (I
High-State Output Voltage (I
Input Logic Low Voltage
Input Logic High Voltage
SUP
SUP
STOP mode current will increase if V
This parameter is guaranteed by process monitoring but is not production tested.
= 12 V, Power Die ON (PSON=1), MCU Operating Using
= 12 V, Cyclic Wake-Up Disabled
SS
RST_A
–Pullup Resistor
(8)
RST_A
RST_A
,
RST_A
IRQ_A
, FGEN,
, FGEN,
,
–Pullup Resistor
IRQ_A
Characteristic
OUT
OUT
OUT
OUT
SS
SS
–Capacitance
= -1.5 mA)
= -1.5 mA)
STATIC ELECTRICAL CHARACTERISTICS
= 1.0 µA)
= 1.5 mA)
(9)
SUP
exceeds 15 V.
(9)
A
= 25°C under nominal conditions unless otherwise noted.
R
R
R
SUP
PULLDOWN
Symbol
I
PULLUP
PULLUP
PULLUP
I
V
I
STOP
V
V
V
V
RUN
C
C
V
V
SUP
OH
OH
OL
OL
IH
IN
IL
IN
≤ 16 V, -40°C ≤ T
1
2
3.85
3.85
Min
8.0
3.5
STATIC ELECTRICAL CHARACTERISTICS
J
≤ 125°C unless otherwise noted.
Typ
4.0
4.0
20
10
60
60
35
Max
0.4
0.4
1.5
18
60
Unit
908E625
mA
µA
pF
pF
kΩ
kΩ
kΩ
µA
V
V
V
V
7

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