MM908E625ACDWB Freescale Semiconductor, MM908E625ACDWB Datasheet - Page 32

IC QUAD HALF BRDG MCU/LIN 54SOIC

MM908E625ACDWB

Manufacturer Part Number
MM908E625ACDWB
Description
IC QUAD HALF BRDG MCU/LIN 54SOIC
Manufacturer
Freescale Semiconductor

Specifications of MM908E625ACDWB

Applications
Automotive Mirror Control
Core Processor
HC08
Program Memory Type
FLASH (16 kB)
Controller Series
908E
Ram Size
512 x 8
Interface
SCI, SPI
Number Of I /o
13
Voltage - Supply
8 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
54-SOIC (0.300", 7.50mm Width) Exposed Pad
Program Memory Size
16 KB
Number Of Programmable I/os
54
Number Of Timers
16
Operating Supply Voltage
- 18 V to + 28 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MM908E625ACDWB
Manufacturer:
FREESCALE Semiconductor
Quantity:
26
HALF-BRIDGES
output stages. The half-bridges can be used in H-Bridge,
high-side, or low-side configurations.
HALF-BRIDGE CONTROL
general enable of the circuitry is done by setting PSON in the
System Control Register (SYSCTL). HBx_L and HBx_H form
one half-bridge. It is not possible to switch on both MOSFETs
in one half-bridge at the same time. If both bits are set, the
high-side MOSFET has a higher priority.
half-bridge being on at the same time, a break-before-make
circuit exists. Switching the high-side MOSFET on is inhibited
as long as the potential between gate and V
certain threshold. Switching the low-side MOSFET on is
blocked as long as the potential between gate and source of
the high-side MOSFET did not fall below a certain threshold.
32
908E625
FUNCTIONAL DEVICE OPERATION
LOGIC COMMANDS AND REGISTERS
• 1 = Hall-effect sensor input terminal current above
• 0 = Hall-effect sensor input terminal current below
Outputs HB1:HB4 provide four low-resistive half-bridge
Each output MOSFET can be controlled individually. The
To avoid both MOSFETs (high side and low side) of one
threshold
threshold
Control
Figure 17. Half-Bridge Push-Pull Output Driver
Current
On/Off
On/Off
Status
BEMF
Status
Limit
SS
is not below a
Overtemperature Protection,
Overcurrent Protection
Overcurrent Protection
High-Side Driver
Low-Side Driver
Current Limitation,
Current Recopy,
Charge Pump,
(HBOUT) owing to the fact that all half-bridge outputs are
switched off.
HALF-BRIDGE OUTPUT REGISTER (HBOUT)
Reset clears the HBx_L bits.
Low-Side On/Off Bits (HBx_L)
Reset
Write
Read HB4
Bits
Reset clears all bits in the H-Bridge Output Register
HB1:HB4 output features:
• Short circuit (overcurrent) protection on high-side and
• Current recopy feature (low side MOSFET)
• Overtemperature protection
• Overvoltage and undervoltage protection
• Current limitation feature (low side MOSFET)
These read/write bits turn on the low-side MOSFETs.
low-side MOSFETs
H
7
0
Register Name and Address: HBOUT - $01
_
HB4
6
L
0
_
HB3
Analog Integrated Circuit Device Data
H
5
0
_
HB3
4
L
0
_
VSUP
GND
HB2
Freescale Semiconductor
H
3
0
_
HB2
2
L
0
_
HB1
H
1
0
_
HBx
HB1
0
L
0
_

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