PHC2300,118 NXP Semiconductors, PHC2300,118 Datasheet
PHC2300,118
Specifications of PHC2300,118
PHC2300 /T3
PHC2300 /T3
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PHC2300,118 Summary of contents
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PHC2300 Complementary enhancement mode MOS transistors Rev. 05 — 24 February 2011 1. Product profile 1.1 General description One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET plastic package. This product is designed and qualified for use ...
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... NXP Semiconductors Table 1. Symbol Dynamic characteristics Q GD [1] Solder point temperature is the temperature at the soldering point of the drain leads. [2] Maximum permissible dissipation per MOS transistor (both devices may thus be loaded the same time). 2. Pinning information Table 2. Pinning information Pin Symbol Description ...
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... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg T junction temperature j [1] Solder point temperature is the temperature at the soldering point of the drain leads ...
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... NXP Semiconductors δ = 0.01 °C. sp (1) R limitation. DSon Fig 3. SOAR; P-channel 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-sp) junction to solder point (2) (K/W) (3) (4) 10 (5) (6) (7) (8) 1 (9) (10) −1 10 −6 − (1) δ = 1.00. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...
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... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter C reverse transfer rss capacitance t turn-on time on t turn-off time off 1200 (mA) 3.5 V 800 400 μs; δ °C; t amb p Fig 5. Output characteristics: drain current as a function of drain-source voltage; N-channel; typical values PHC2300 Product data sheet ...
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... NXP Semiconductors 1200 I D (mA) 800 400 ° amb Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; N-channel; typical values 200 C (pF) 150 C iss 100 50 C oss C rss Fig 9. Input, output and reverse transfer capacitances as a function of drain-source voltage; N-channel; typical values ...
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... NXP Semiconductors (V) 8 (1) ( 535 1070 -115 Fig 11. Gate-source voltage and drain-source voltage as a function of gate charge; P-channel typical values 2 10 (1) (2) (3) R DSon (4) (Ω) ( ≥ DSon amb ( mA mA mA 100 mA 200 mA. D Fig 13. Drain-source on-state resistance as a function of gate-source voltage; N-channel typical ...
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... NXP Semiconductors 0 (A) 0.4 0.3 0.2 0 0.2 0.4 Fig 15. Source-drain current as a function of source-drain diode voltage; N-channel; typical values 1.4 k 1.2 1.0 0.8 0.6 −75 − mA Fig 17. Temperature coefficient of gate-source threshold voltage as a function temperature; P-channel; typical values PHC2300 Product data sheet ...
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... NXP Semiconductors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PHC2300 v.5 20110224 • Modifications: Various changes to content. PHC2300 v.4 20101216 PHC2300 Product data sheet Complementary enhancement mode MOS transistors Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers ...
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... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Legal information .12 9.1 Data sheet status ...