PHC2300,118 NXP Semiconductors, PHC2300,118 Datasheet - Page 9

• Manufacturer Part Number: PHC2300,118
• Description: MOSFET N/P-CH 300V 340MA SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC2300,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 340mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.24nC @ 10V
• Input Capacitance (ciss) @ Vds: 102pF @ 50V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934054090118; PHC2300 /T3; PHC2300 /T3

NXP Semiconductors
PHC2300
Product data sheet
Fig 15. Source-drain current as a function of
Fig 17. Temperature coefficient of gate-source
I
(A)
SD
0.5
0.4
0.3
0.2
0.1
1.4
k
1.2
1.0
0.8
0.6
0
−75
source-drain diode voltage; N-channel; typical
values
threshold voltage as a function temperature;
P-channel; typical values
V
0
DS
= V
−25
0.2
GS
; I
D
= -1 mA.
0.4
25
0.6
75
0.8
125
All information provided in this document is subject to legal disclaimers.
V
T
SD
mda238
mbh438
j
(°C)
(V)
Rev. 05 — 24 February 2011
175
1
Complementary enhancement mode MOS transistors
Fig 16. Temperature coefficient of gate-source
Fig 18. Input, output and reverse transfer capacitances
(pF)
C
1.25
0.75
0.25
160
120
0.5
80
40
k
0
1
0
−50
threshold voltage as a function temperature;
N-channel; typical values
as a function of drain-source voltage; typical
values
V
0
DS
= V
−5
GS
; I
0
D
= 1 mA.
−10
50
−15
100
PHC2300
−20
© NXP B.V. 2011. All rights reserved.
T
V
j
(°C)
mda236
DS
C
C
C
mld847
rss
iss
oss
(V)
−25
150
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