PHC2300,118 NXP Semiconductors, PHC2300,118 Datasheet - Page 2

• Manufacturer Part Number: PHC2300,118
• Description: MOSFET N/P-CH 300V 340MA SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC2300,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 340mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.24nC @ 10V
• Input Capacitance (ciss) @ Vds: 102pF @ 50V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934054090118; PHC2300 /T3; PHC2300 /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PHC2300
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PHC2300
Symbol Description
S1
G1
S2
G2
D2
D2
D1
D1
Pinning information
Ordering information
source1
gate1
source2
gate2
drain2
drain2
drain1
drain1
Table 1.
[1]
[2]
Package
Name
SO8
Symbol
Dynamic characteristics
Q
GD
Solder point temperature is the temperature at the soldering point of the drain leads.
Maximum permissible dissipation per MOS transistor (both devices may thus be loaded up to 1.6 W at the
same time).
Quick reference data
Parameter
gate-drain charge V
Description
plastic small outline package; 8 leads; body width 3.9 mm
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 24 February 2011
Simplified outline
Conditions
V
P-channel
V
V
N-channel
SOT96-1 (SO8)
…continued
GS
DS
GS
DS
8
1
Complementary enhancement mode MOS transistors
= -10 V; I
= -50 V; T
= 10 V; I
= 50 V; T
D
D
j
j
5
4
= 25 °C;
= 170 mA;
= 25 °C;
= -115 mA;
Graphic symbol
D1 D1 D2 D2
S1 G1 S2 G2
Min
-
-
PHC2300
© NXP B.V. 2011. All rights reserved.
Typ
674
1385 -
sym114
Version
SOT96-1
Max Unit
-
2 of 14
pC
pC