PHC2300,118 NXP Semiconductors, PHC2300,118 Datasheet - Page 8

• Manufacturer Part Number: PHC2300,118
• Description: MOSFET N/P-CH 300V 340MA SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC2300,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 340mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.24nC @ 10V
• Input Capacitance (ciss) @ Vds: 102pF @ 50V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934054090118; PHC2300 /T3; PHC2300 /T3

NXP Semiconductors
PHC2300
Product data sheet
Fig 11. Gate-source voltage and drain-source voltage
Fig 13. Drain-source on-state resistance as a function
R
DSon
(Ω)
V
(V)
GS
10
12
10
8
4
0
1
2
as a function of gate charge; P-channel typical
values
of gate-source voltage; N-channel typical
values
V
(1) V
(2) V
V
(1) I
(2) I
(3) I
(4) I
(5) I
0
0
DS
DS
D
D
D
D
D
= -50 V; I
≥ I
DS
GS
= 10 mA.
= 20 mA.
= 50 mA.
= 100 mA.
= 200 mA.
(1)
D
2
X R
535
DSon
D
(1)
(2)
(3)
(4)
(5)
= -115 mA; T
4
; T
1070
amb
(2)
= 25 °C; t
6
amb
1605
= 25 °C.
All information provided in this document is subject to legal disclaimers.
8
Q
p
V
G
= 300 μs; δ = 0.
GS
(pC)
mld845
mld846
(V)
Rev. 05 — 24 February 2011
2140
10
50
37.5
25
12.5
0
V
(V)
DS
Complementary enhancement mode MOS transistors
Fig 12. Source current as a function of source-drain
Fig 14. Drain-source on-state resistance as a function
R
DSon
(Ω)
−0.5
−0.4
−0.3
−0.2
−0.1
I
(A)
10
SD
10
0
1
2
voltage; P-channel typical values
of gate-source voltage; P-channel typical
values
V
(1) I
(2) I
(3) I
(4) I
(5) I
0
0
DS
D
D
D
D
D
≥ I
= -10 mA.
= -20 mA.
= -50 mA.
= -100 mA.
= -200 mA.
D
−2
X R
−0.4
DSon
(1)
(2)
(3)
(4)
(5)
−4
; T
amb
= 25 °C; t
−6
−0.8
PHC2300
V
© NXP B.V. 2011. All rights reserved.
−8
SD
p
V
= 300 μs; δ = 0.
(V)
GS
mda233
mda239
(V)
−1.2
−10
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