PHC2300,118 NXP Semiconductors, PHC2300,118 Datasheet - Page 5

• Manufacturer Part Number: PHC2300,118
• Description: MOSFET N/P-CH 300V 340MA SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC2300,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 340mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.24nC @ 10V
• Input Capacitance (ciss) @ Vds: 102pF @ 50V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934054090118; PHC2300 /T3; PHC2300 /T3

NXP Semiconductors
6. Characteristics
Table 6.
PHC2300
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
DSS
GSS
(BR)DSS
GS(th)
DSon
iss
oss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
Conditions
I
P-channel
I
N-channel
I
N-channel
I
P-channel
V
P-channel
V
N-channel
V
N-channel
V
N-channel
V
P-channel
V
P-channel
V
N-channel
V
P-channel
I
T
I
T
I
T
I
T
I
T
V
T
V
T
V
T
V
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
D
j
j
j
j
j
j
j
j
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= 25 °C; N-channel
= 25 °C; P-channel
= 25 °C; N-channel
= 25 °C; P-channel
= 25 °C; N-channel
= 25 °C; N-channel
= 25 °C; P-channel
= 25 °C; N-channel
= 25 °C; P-channel
= -10 µA; V
= 10 µA; V
= 1 mA; V
= -1 mA; V
= 170 mA; V
= -115 mA; V
= 170 mA; V
= -115 mA; V
= 170 mA; V
= -240 V; V
= 240 V; V
= 50 V; V
= -50 V; V
= 50 V; V
= -50 V; V
= 20 V; V
= -20 V; V
= 20 V; V
= -20 V; V
= 10 V; I
= -10 V; I
Rev. 05 — 24 February 2011
DS
D
GS
DS
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
= 170 mA; T
DS
DS
DS
GS
= V
DS
DS
= -115 mA; T
GS
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= 50 V; V
= 50 V; V
= 50 V; V
= 0 V; T
= -50 V; V
= -50 V; V
= 0 V; T
GS
Complementary enhancement mode MOS transistors
GS
; T
; T
j
j
j
j
j
j
= 25 °C;
= 25 °C;
j
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
j
= 25 °C;
= 25 °C;
j
= 25 °C;
j
GS
GS
GS
= 25 °C;
= 25 °C;
GS
GS
j
= 25 °C;
= 10 V;
= 10 V;
= 10 V;
= -10 V;
= -10 V;
Min
-300
300
0.8
-0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
6240
2137
226
68
674
1385
102
45
15
15
PHC2300
© NXP B.V. 2011. All rights reserved.
Max
-
-
2
-2
-100
100
100
100
100
100
6
17
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
nA
nA
nA
Ω
Ω
pC
pC
pC
pC
pC
pC
pF
pF
pF
pF
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