PHC2300,118 NXP Semiconductors, PHC2300,118 Datasheet - Page 7

• Manufacturer Part Number: PHC2300,118
• Description: MOSFET N/P-CH 300V 340MA SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC2300,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 340mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.24nC @ 10V
• Input Capacitance (ciss) @ Vds: 102pF @ 50V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934054090118; PHC2300 /T3; PHC2300 /T3

NXP Semiconductors
PHC2300
Product data sheet
Fig 7.
Fig 9.
(mA)
1200
(pF)
I
800
400
200
150
100
D
C
50
0
0
function of gate-source voltage; N-channel;
typical values
as a function of drain-source voltage;
N-channel; typical values
V
Transfer characteristics: drain current as a
Input, output and reverse transfer capacitances
0
0
DS
= 10 V; T
2
5
C
C
C
rss
iss
oss
amb
10
4
= 25 °C; t
15
6
p
= 80 μs; δ = 0.
20
8
All information provided in this document is subject to legal disclaimers.
V
V
GS
DS
mld842
mld843
(V)
(V)
Rev. 05 — 24 February 2011
10
25
Complementary enhancement mode MOS transistors
Fig 8.
Fig 10. Gate-source voltage and drain-source voltage
−800
(mA)
−600
−400
−200
V
(V)
I
GS
D
12
0
8
4
0
function of gate-source voltage; P-channel;
typical values
as a function of gate charge; N-channel typical
values
V
Transfer characteristics: drain current as a
V
(1) V
(2) V
0
0
DS
DS
= -10 V; T
= 50 V; I
DS
GS
(1)
−2
1560
D
amb
= 170 mA; T
−4
= 25 °C; t
3120
(2)
−6
amb
p
4680
= 80 μs; δ = 0.
PHC2300
= 25 °C.
© NXP B.V. 2011. All rights reserved.
−8
Q
V
G
GS
mbh440
(pC)
mld844
(V)
6240
−10
50
37.5
25
12.5
0
V
(V)
DS
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