PHC2300,118 NXP Semiconductors, PHC2300,118 Datasheet - Page 4

• Manufacturer Part Number: PHC2300,118
• Description: MOSFET N/P-CH 300V 340MA SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC2300,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 340mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.24nC @ 10V
• Input Capacitance (ciss) @ Vds: 102pF @ 50V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934054090118; PHC2300 /T3; PHC2300 /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHC2300
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-sp)
(K/W)
R
th js
10
10
10
−1
1
2
10
P-channel; typical values
δ = 0.01; T
(1) R
SOAR; P-channel
(1) δ = 1.00. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.
Transient thermal resistance from junction to soldering point as a function of pulse time for N- and
−6
Thermal characteristics
DSon
Parameter
thermal resistance from
junction to solder point
limitation.
sp
= 80 °C.
(10)
(1)
(2)
(3)
(4)
(6)
(7)
(8)
(9)
(5)
10
−5
−10 −
−10 −
−10 −
−10
(A)
I
−1
D
1
2
3
−1
All information provided in this document is subject to legal disclaimers.
P
10
−4
(1)
Conditions
t
p
Rev. 05 — 24 February 2011
T
−10
δ =
T
t
p
t
10
Complementary enhancement mode MOS transistors
−3
DC
−10
2
V
DS
(V)
mgl245
10
−2
−10
3
10
P
−1
Min
-
t
p
PHC2300
t
p
T
© NXP B.V. 2011. All rights reserved.
(s)
Typ
-
δ =
mda244
t
T
p
t
1
Max
43
4 of 14
Unit
K/W