PSMN009-100B,118 NXP Semiconductors, PSMN009-100B,118 Datasheet - Page 11

• Manufacturer Part Number: PSMN009-100B,118
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN009-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 230W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 156nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057045118::PSMN009-100B /T3::PSMN009-100B /T3

NXP Semiconductors
8. Revision history
Table 7.
PSMN009-100B_2
Product data sheet
Document ID
PSMN009-100B_2
Modifications:
PSMN009_100P_100B-01
Revision history
Release date Data sheet status
20090706
20020429
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number PSMN009-100B separated from data sheet PSMN009_100P_100B-01.
Product data sheet
Product data
Rev. 02 — 6 July 2009
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
PSMN009-100B
Supersedes
PSMN009_100P_100B-01
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© NXP B.V. 2009. All rights reserved.
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