PSMN009-100B,118 NXP Semiconductors, PSMN009-100B,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN009-100B,118
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN009-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 230W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 156nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057045118::PSMN009-100B /T3::PSMN009-100B /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN009-100B_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
DS(AL)S
Fig 1.
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
I
(%)
der
120
100
80
60
40
20
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
non-repetitive
drain-source avalanche
energy
non-repetitive
drain-source avalanche
current
30
60
90
120
Conditions
T
T
V
V
t
T
pulsed; t
T
t
V
unclamped; t
V
unclamped
p
p
j
j
mb
mb
GS
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 10 V; V
150
T
mb
03ah99
p
≤ 50 µs; T
(°C)
180
j
p
≤ 175 °C
Rev. 02 — 6 July 2009
j
mb
mb
j(init)
sup
= 0.1 ms; R
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
= 15 V; R
Figure 2
= 25 °C; I
mb
j
mb
≤ 150 °C; δ = 25 %
N-channel TrenchMOS SiliconMAX standard level FET
= 25 °C; see
= 25 °C
GS
Fig 2.
GS
GS
D
= 20 kΩ
= 50 Ω
= 35 A; V
P
= 50 Ω; T
Figure
(%)
der
Figure 1
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 3
1; see
sup
j(init)
= 15 V;
= 25 °C;
Figure 3
50
PSMN009-100B
100
Min
-
-
-20
-
-
-
-
-55
-55
-30
-
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
100
100
20
65
75
400
230
175
175
30
75
400
120
75
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
A
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