PSMN009-100B,118 NXP Semiconductors, PSMN009-100B,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN009-100B,118
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN009-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 230W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 156nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057045118::PSMN009-100B /T3::PSMN009-100B /T3

NXP Semiconductors
6. Characteristics
Table 6.
PSMN009-100B_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
I
see
D
D
D
D
D
D
S
j
j
DS
DS
GS
GS
GS
GS
DS
DS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 75 A; V
= 25 °C; see
= 25 °C; see
= 25 A; V
Figure 8
Figure 8
Figure 8
Figure
Figure
Figure 13
= 30 V; V
= 30 V; V
= 25 V; V
= 15 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 6 Ω; T
9; see
9; see
GS
DS
DS
DS
DS
D
D
Rev. 02 — 6 July 2009
GS
GS
GS
DS
L
DS
= 25 A; T
= 25 A; T
= 80 V; V
= 0 V; T
j
= V
= V
= V
Figure 11
Figure 12
= 1.25 Ω; V
GS
GS
= 25 °C; I
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
Figure 10
Figure 10
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
N-channel TrenchMOS SiliconMAX standard level FET
j
= 25 °C;
j
j
j
j
j
GS
j
j
j
= 175 °C;
= 25 °C;
= -55 °C;
= 175 °C;
= 25 °C;
j
D
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
GS
= 10 V;
= -55 °C
= 25 °C
= 12 A
= 10 V;
PSMN009-100B
Min
90
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.02
10
10
20.25
7.5
156
31
44
8250
620
300
38
59
120
43
0.8
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
4
4.4
500
1
100
100
23.8
8.8
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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