PSMN009-100B,118 NXP Semiconductors, PSMN009-100B,118 Datasheet - Page 5

• Manufacturer Part Number: PSMN009-100B,118
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN009-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 230W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 156nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057045118::PSMN009-100B /T3::PSMN009-100B /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN009-100B_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
0.02
δ = 0.5
0.2
0.1
0.05
single pulse
10
−5
10
−4
Conditions
see
minimum footprint; mounted on
a printed-circuit board
Rev. 02 — 6 July 2009
Figure 4
10
−3
N-channel TrenchMOS SiliconMAX standard level FET
10
−2
10
−1
P
t
p
1
PSMN009-100B
T
Min
-
-
t
δ =
p
(s)
03af48
T
t
t
p
10
Typ
-
50
© NXP B.V. 2009. All rights reserved.
Max
0.65
-
Unit
K/W
K/W
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