DEMO9S08LIN Freescale, DEMO9S08LIN Datasheet - Page 52

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DEMO9S08LIN

Manufacturer Part Number
DEMO9S08LIN
Description
Manufacturer
Freescale
Datasheet

Specifications of DEMO9S08LIN

Lead Free Status / RoHS Status
Compliant
Chapter 4 Memory
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
52
PROGRAM FLOW
FLASH BURST
MC9S08LC60 Series Data Sheet: Technical Data, Rev. 4
Figure 4-3. FLASH Burst Program Flowchart
YES
0
WRITE COMMAND (0x25) TO FCMD
TO BUFFER ADDRESS AND DATA
AND CLEAR FCBEF
NEW BURST COMMAND ?
TO LAUNCH COMMAND
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FACCERR ?
FPVIO OR
FCBEF ?
FCCF ?
START
DONE
1
NO
1
1
NO
(Note 1)
(Note 2)
YES
0
0
Note 2: Wait at least four bus cycles before
Note 1: Required only once after reset.
ERROR EXIT
checking FCBEF or FCCF.
Freescale Semiconductor