NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 10

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NAND08GW3B2CN6E

Manufacturer Part Number
NAND08GW3B2CN6E
Description
8GBIT SLC NAND FLASH TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND08GW3B2CN6E

Cell Type
NAND
Density
8Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

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Description
Table 3.
10/72
I/O8-15
Signal
I/O0-7
V
V
WP
RB
NC
DU
CL
AL
W
E
R
DD
SS
Signals names
Data input/outputs, address inputs, or command inputs (x8/x16 devices)
Data input/outputs (x16 devices)
Address Latch Enable
Command Latch Enable
Chip Enable
Read Enable
Ready/Busy (open-drain output)
Write Enable
Write Protect
Supply voltage
Ground
Not connected internally
Do not use
Function
NAND04G-B2D, NAND08G-BxC
Power supply
Input/output
Input/output
Direction
Ground
Output
Input
Input
Input
Input
Input
Input

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