NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 27

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

NAND04G-B2D, NAND08G-BxC
Figure 11. Page program operation
Figure 12. Random data input during sequential data input
RB
I/O
RB
I/O
Row Add 1,2,3
Code
Cmd
80h
Page Program
Setup Code
5 Add cycles
80h
Address
Inputs
Col Add 1,2
Main Area
Data Intput
Address Inputs
Spare
Code
Area
Cmd
85h
2 Add cycles
Address
Col Add 1,2
Data Input
Inputs
Data Input
(Program Busy time)
Confirm
(Program Busy time)
Code
10h
tBLBH2
tBLBH2
Confirm
Code
10h
Main Area
Busy
Busy
Read Status Register
Read Status Register
Device operations
70h
70h
Spare
Area
SR0
SR0
ai08659
ai08664
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