NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 53

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

NAND04G-B2D, NAND08G-BxC
Table 29.
1. Standby and leakage currents refer to a single die device. For a multiple die device, their value must be multiplied for the
Table 30.
Symbol
I
Symbol
t
t
t
t
t
t
t
OL
t
t
t
t
ALHWH
CLHWH
t
WHALH
WHCLH
t
t
WHCLL
ALLWH
CLLWH
WHWL
WHDX
WHEH
WLWH
DVWH
WLWL
V
ELWH
I
I
I
I
I
V
V
number of dice of the stacked device, while the active power consumption depends on the number of dice concurrently
executing different operations.
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
t
t
t
t
Alt.
t
t
t
t
t
t
t
CLS
ALH
CLH
ALS
WH
WC
WP
DS
CS
DH
CH
DC characteristics (3 V devices)
V
AC characteristics for command, address, data input
DD
Operating
Standby current (CMOS)
Output high voltage level
Output Low current (RB)
Output low voltage level
Output leakage current
Standby current (TTL)
current
Input leakage current
supply voltage (erase and
Address Latch Low to Write Enable High
Address Latch High to Write Enable High
Command Latch High to Write Enable High
Command Latch Low to Write Enable High
Data Valid to Write Enable High
Chip Enable Low to Write Enable High
Write Enable High to Address Latch High
Write Enable High to Command Latch High
Write Enable High to Command Latch Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
Input high voltage
Input low voltage
program lockout)
Parameter
Sequential
Program
Erase
read
Parameter
E = V
E = V
V
V
OUT
Test conditions
(1)
t
IN
I
RLRL
E = V
I
OH
WP = 0/V
= 0 to V
OL
V
IH
= 0 to V
IL,
OL
, WP = 0/V
= -400 µA
= 2.1 mA
I
minimum
= 0.4 V
OUT
DD
–
–
–
–
–
-0.2,
DD
= 0 mA
DD
DD
AL setup time
CL setup time
Data setup time
E setup time
AL hold time
CL hold time
Data hold time
E hold time
W high hold time
W pulse width
Write cycle time
max
max
DD
0.8 V
Min
-0.3
2.4
–
–
–
–
–
–
–
8
–
DD
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
DC and AC parameters
Typ
15
15
15
10
–
–
–
–
–
–
–
–
1.8 V
25
25
20
35
10
10
10
10
15
25
45
V
0.2 V
DD
Max
±10
±10
0.4
1.8
30
30
30
50
10
1
-
+0.3
3 V
12
12
12
20
10
12
25
DD
5
5
5
5
Unit
53/72
mA
mA
mA
mA
mA
Unit
µA
µA
µA
V
V
V
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns