NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 8

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NAND08GW3B2CN6E

Manufacturer Part Number
NAND08GW3B2CN6E
Description
8GBIT SLC NAND FLASH TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND08GW3B2CN6E

Cell Type
NAND
Density
8Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

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Description
Table 2.
1. x16 organization is only available for MCP products.
2. The NAND08G-BxC is composed of two 4-Gbit dice.
8/72
NAND04GW3B2D
NAND04GW4B2D
NAND08GW3B2C
NAND08GW4B2C
NAND08GW3B4C
NAND04GR3B2D
NAND04GR4B2D
NAND08GR3B2C
NAND08GR4B2C
NAND08GR3B4C
Part number
and come with three security features:
These security features are subject to an NDA (non-disclosure agreement) and are,
therefore, not described in the datasheet. For more details about them, contact your nearest
Numonyx sales office.
For information on how to order these options, refer to
scheme. Devices are shipped from the factory with block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
Table 2: Product description
available in the family.
Product description
Density
4-Gbit
8-Gbit
OTP (one time programmable) area, which is a restricted access area where sensitive
data/code can be stored permanently
Serial number (unique identifier), which allows the device to be uniquely identified
Non-volatile protection to lock sensible data permanently.
width
Bus
x16
x16
x8
x8
x8
x8
1024+ 32
1024+ 32
2048+64
2048+64
2048+64
words
words
Page
bytes
bytes
bytes
size
2K words
2K words
4K bytes
4K bytes
4K bytes
128K +
128K +
128K+
Block
64K +
64K +
size
lists the part numbers and other information for all the devices
64 pages
64 pages
Memory
x 4096
x 8192
blocks
blocks
array
Operating
voltage
1.95 V
1.95 V
1.95 V
1.95 V
1.95 V
1.7 to
2.7 to
1.7 to
2.7 to
1.7 to
2.7 to
1.7 to
2.7 to
1.7 to
2.7 to
3.6 V
3.6 V
3.6 V
3.6 V
3.6 V
Sequential
time (min)
access
45 ns
25 ns
45 ns
25 ns
45 ns
25 ns
45 ns
25 ns
45 ns
25 ns
Table 34: Ordering information
NAND04G-B2D, NAND08G-BxC
time (max)
Random
access
25 µs
25 µs
Timings
Program
200 µs
200 µs
Page
(typ)
1.5 ms
1.5 ms
Block
Erase
(typ)
ULGA52
ULGA52
ULGA52
Package
ULGA52
TSOP48
ULGA52
TSOP48
(1)(2)
(1)
(2)
(2)
(2)

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