NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 15

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

NAND04G-B2D, NAND08G-BxC
Figure 6.
Block
Page
Block
Page
Memory array organization
1024 words
2048 bytes
Main area
Page buffer, 2112 bytes
Plane = 2048 blocks, block = 64 pages, page = 2112 bytes (2048 + 64)
Main area
1024 words
Plane = 2048 blocks, block = 64 pages, page = 1056 words (1024 + 32)
Page buffer, 1056 bytes
2048 bytes
2-page buffer, 2 x 2112 bytes
2-page buffer, 2 x 1056 bytes
First plane
First plane
bytes
words
bytes
words
64
64
32
32
x 8 bus width
x 16 bus width
1024 words
2048 bytes
Page buffer, 2112 bytes
Main area
Page buffer, 1056 bytes
1024 words
Main area
2048 bytes
Second plane
Second plane
bytes
words
bytes
words
64
64
32
32
16 bits
16 bits
8 bits
8 bits
Memory array organization
AI13170C
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