NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 21

no-image

NAND08GW3B2CN6E

Manufacturer Part Number
NAND08GW3B2CN6E
Description
8GBIT SLC NAND FLASH TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND08GW3B2CN6E

Cell Type
NAND
Density
8Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND08GW3B2CN6E
Manufacturer:
CYPRESS
Quantity:
1 003
Part Number:
NAND08GW3B2CN6E
Manufacturer:
ST
0
Part Number:
NAND08GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
NAND08GW3B2CN6E
Quantity:
200
NAND04G-B2D, NAND08G-BxC
5
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the command Latch Enable signal is High. Device operations are selected by writing specific
commands to the command register. The two-step command sequences for program and
erase operations are imposed to maximize data security.
Table 10
Table 10.
1. Commands in bold are referring to ONFI 1.0 specifications.
2. Only during cache read busy.
3. Command maintained for backward compatibility.
Read
Random Data Output
Cache Read (sequential)
Enhanced Cache Read (random)
Exit Cache Read
Page Program
(sequential input default)
Random Data Input
Multiplane Page Program
Multiplane Page Program
Copy Back Read
Copy Back Program
Multiplane Copy Back Program
Multiplane Copy Back Program
Block Erase
Multiplane Block Erase
Multiplane Block Erase
Reset
Read Electronic Signature
Read Status Register
Read Status Enhanced
Read Parameter Page
Read EDC Status Register
summarizes the commands.
Command
Commands
(1)
(3)
(3)
(3)
1
st
ECh
FFh
7Bh
00h
05h
31h
00h
3Fh
80h
85h
80h
80h
00h
85h
85h
85h
60h
60h
60h
90h
70h
78h
cycle
2
Bus write operations
nd
D0h
D1h
E0h
30h
31h
10h
11h
11h
35h
10h
11h
11h
60h
cycle
3
rd
D0h
81h
80h
81h
85h
60h
cycle
4
th
D0h
10h
10h
10h
10h
cycle
Command set
during busy
Commands
accepted
Yes
Yes
Yes
Yes
(2)
21/72

Related parts for NAND08GW3B2CN6E