NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 51

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

NAND04G-B2D, NAND08G-BxC
12
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the devices. The parameters in the following DC and AC characteristics
tables are derived from tests performed under the measurement conditions summarized in
Table
measurement conditions when relying on the quoted parameters.
Table 26.
Table 27.
1. T
2. Input/output capacitances double in stacked devices.
Supply voltage (V
Ambient temperature (T
Load capacitance (C
and C
Input pulses voltages
Input and output timing ref. voltages
Output circuit resistor R
Input rise and fall times
Symbol
C
C
A
I/O
IN
= 25 °C, f = 1 MHz. C
26. Designers should check that the operating conditions in their circuit match the
L
)
Input capacitance
Input/output
capacitance
Operating and AC measurement conditions
Capacitance
DD
Parameter
)
L
) (1 TTL GATE
A
ref
)
IN
(2)
Parameter
and C
(1)
I/O
are not 100% tested.
Test condition
V
V
1.8 V device
1.8 V device
IN
3 V device
3 V device
IL
Grade 1
Grade 6
= 0 V
= 0 V
Typ
Min
–40
1.7
2.7
30
50
0
0
NAND flash
V
DC and AC parameters
8.35
DD
5
/2
Max
Max
1.95
10
10
V
3.6
70
85
DD
Units
Unit
kΩ
pF
pF
°C
pF
ns
V
V
V
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