TS8388BMFS9NB1 E2V, TS8388BMFS9NB1 Datasheet - Page 17

• Manufacturer Part Number: TS8388BMFS9NB1
• Manufacturer: E2V

Specifications of TS8388BMFS9NB1

• Lead Free Status / RoHS Status: Supplier Unconfirmed

4.7
4.7.1
TSEV8388B - Evaluation Board User Guide
Temperature
Monitoring and
Data Ready
Reset Function
TS8388B ADC Diode
Junction
Temperature
Measurement Setup
One single pad is used for both DRRB input command and die junction monitoring. The
pad denomination is DRRB/DIOD. Temperature monitoring and Data Ready control by
DRRB is not possible simultaneously.
For operation in the extended temperature range, forced convection is required, to
maintain the device junction temperature below the specified maximum value
(Tj max = 125°C).
A die junction temperature measurement setting has been included on the board, for
junction temperature monitoring.
Four 2 mm section banana jacks (J9, J10, J11, J12) are provided to force current and
measure the VBE voltage across the dedicated transistor connected between pads 32
and 33.
The measurement method consists of forcing a 3 mA current flowing into a diode
mounted transistor, connected between pad 32 and pad 33 (pad 32 is the emitter and
pad 33 is the shorted base-collector).
CAUTION:
Respect the current source polarity. In any case, make sure the maximum voltage com-
pliance of the current source is limited to maximum 1V or use the resistor mounted in
serial with the current source to avoid damage occurring to the transistor device. This
may occur for instance if current source is reverse connected.
The measurement setup is described in Figure 4-2. The diode VBE forward voltage ver-
sus junction temperature (in steady state conditions) is given in Figure 4-3.
Figure 4-2. TS8388B Diode Junction Temperature Measurement Setup
NP1032C2
Pads
33
32
∅ 2 mm banana connectors
J11
J9
J12
J10
I-GND
I-DIODE
V-DIODE
V-GND
Application Information
0973D–BDC–02/09
4-3