SI5317C-C-GMR Silicon Laboratories Inc, SI5317C-C-GMR Datasheet - Page 5

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SI5317C-C-GMR

Manufacturer Part Number
SI5317C-C-GMR
Description
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of SI5317C-C-GMR

Lead Free Status / RoHS Status
Supplier Unconfirmed
Table 2. DC Characteristics (Continued)
(V
Differential Input
Voltage Swing
CKOUT Output Clock
Common Mode
Differential Output Swing
Single-ended Output Swing
Differential Output Voltage
Common Mode
Output Voltage
Differential
Output Voltage
Common Mode
Output Voltage
Output Voltage Low
Output Voltage High
Output Drive Current
2-Level LVCMOS Input Pins
Input Voltage Low
Notes:
DD
1. LVPECL outputs require VDD > 2.25 V.
2. This is the amount of leakage that the 3L inputs can tolerate from an external driver. See Figure 3 on page 9. In most
3. No overshoot or undershoot.
= 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, T
designs, an external resistor voltage divider is recommended.
Parameter
1
CKO
CKO
CKO
CKO
Symbol
CKO
CKO
CKO
V
V
V
V
V
OCM
OD
VOHLH
SE
VOLLH
ID
IL
VCM
VCM
VD
VD
IO
A
= –40 to 85 ºC)
put low or CKO
high. CKOUT+ and CKOUT–
Low swing LVDS 100  load
Driving into CKO
LVPECL 100  load
LVPECL 100  load
LVPECL 100  load
f
f
shorted externally.
LVDS 100  load
LVDS 100  load
CKIN
CKIN
CML 100  load
CML 100  load
Test Condition
See Figure 2.
See Figure 2.
V
V
V
V
V
V
Rev. 1.0
line-to-line
line-to-line
line-to-line
line-to-line
line-to-line
line-to-line
line-to-line
line-to-line
DD
DD
DD
DD
DD
DD
< 212.5 MHz
> 212.5 MHz
CMOS
CMOS
CMOS
= 1.71 V
= 1.71 V
= 2.25 V
= 2.97 V
= 1.8 V
= 3.3 V
VOH
VOL
for output
for out-
0.8 x V
V
1.125
0.25
Min
1.42
350
500
350
0.2
1.1
0.5
DD
DD
V
0.36
Typ
425
700
425
DD
1.2
7.5
32
V
1.275
Max
0.93
1.25
500
900
500
DD
1.9
0.4
0.5
0.7
0.8
Si5317
mV
mV
mV
Units
V
V
V
V
mA
mA
V
V
V
V
V
V
V
V
PP
PP
PP
PP
PP
PP
PP
5

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