STM32W108HBU6 STMicroelectronics, STM32W108HBU6 Datasheet - Page 198

• Manufacturer Part Number: STM32W108HBU6
• Manufacturer: STMicroelectronics

Specifications of STM32W108HBU6

• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Processing Unit: Microprocessor
• Operating Supply Voltage (min): 1.18V
• Operating Supply Voltage (typ): 1.25V
• Operating Supply Voltage (max): 1.32V
• Package Type: VFQFPN EP
• Pin Count: 40
• Mounting: Surface Mount
• Rad Hardened: No
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Electrical characteristics
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Table 53.
Non-RF system electrical characteristics
Table 54
Table 54.
Output voltage for logic 0
Output voltage for logic 1
Output source current (standard
current pad)
Output sink current (standard
current pad)
Output source current
high current pad: PA6, PA7,
PB6, PB7, PC0
Output sink current
high current pad: PA6, PA7,
PB6, PB7, PC0
Total output current (for I/O
Pads)
Input voltage threshold for
OSC32A
Input voltage threshold for
OSCA
System wakeup time from deep
sleep
Shutdown time going into deep
sleep
lists the non-RF system level characteristics for the STM32W.
Parameter
Parameter
Digital I/O characteristics (continued)
Non-RF system electrical characteristics
Doc ID 16252 Rev 7
V
(I
pads, 8 mA for high current
pads)
V
(I
pads, 8 mA for high current
pads)
I
I
I
I
I
OHS
OLS
OHH
OLH
OH
OL
OL
OH
OH
From wakeup event to first
ARM
running from 6MHz internal RC
clock
Includes supply ramp time and
oscillator startup time
From last ARM
instruction to deep sleep mode
+ I
= 4 mA for standard
= 4 mA for standard
OL
®
Conditions
Cortex-M3 instruction
Conditions
®
Cortex-M3
VDD_PADS
VDD_PADS
VDD_PADS
STM32W108CB, STM32W108HB
0.82 x
0.2 x
0.2 x
Min.
A
0
–
–
–
–
–
Min.
–
–
Typ.
–
–
–
–
–
–
–
–
–
Typ.
110
5
VDD_PADS
VDD_PADS
VDD_PADS
VDD_PADS
0.18 x
Max.
0.8 x
0.8 x
Max.
40
A
4
4
8
8
–
–
Unit
Unit
mA
mA
mA
mA
mA
µs
µs
V
V
V
V